Abstract
In this article, the authors have investigated the properties of the popular native defects in nitrogen-doped ZnO microrod samples grown by the chemical vapor transport method. Excellent crystalline quality has been confirmed in the samples. Optical signatures of zinc interstitials and zinc vacancies have been observed by employing Raman and variable temperature photoluminescence. By tuning the flow rate of oxidant (nitrous oxide) during growth, the concentration of zinc interstitials and vacancies can be modified. When the flow rate of the nitrous oxide is high, the zinc interstitials can be suppressed while the zinc vacancy-related shallow acceptors can be enhanced. These are both beneficial to the realization and further enhancement of p-type conductivity in ZnO material. This study provides a good understanding of the properties of the native point defects in nitrogen-doped ZnO microrods and also offers a simple way to control the defects towards p-type direction.
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