“Ideal” Static Breakdown in High-Voltage (1 kV) 4H-SiC p–n Junction Diodes with Guard Ring Termination

Abstract

Nearly “ideal” static high-voltage breakdown (1060 V) in 4H-SiC p+-n-n+ diodes with guard ring termination is observed. At the doping level of 1.9 × 1016 cm−3 in the n-type base, the diode breakdown field is 2.7 × 106 V/cm. At the reverse bias as high as 1000 V, the leakage-current density does not exceed 5 × 10−5 A/cm2. The diodes withstand without degradation an avalanche-current density of 1 A/cm2, which corresponds to the dissipated power of 1 kW/cm2.