Abstract
Two ICP-AES techniques for analysis of high-purity bismuth oxide are described. The direct techniques enables determination of 46 impurities in bismuth oxide with limits of detection (LODs) at the level of 10−8–10−5 wt %, and the method with separation matrix allows determination of 22 impurities with LODs at the level of 10−9-10−6 wt %.
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