Abstract
Our previous experiments have shown that Al films could be formed epitaxially on Si substrates by ionized cluster beam (ICB) deposition. These films show high thermal stability and long electromigration lifetime. Careful observation by TEM revealed that the films deposited at room temperatures contained low angle grain boundaries and dislocation loops. Annealing these films at 400° C for 30 min produced a vanishing of both the low angle grain boundaries and the dislocation loops, and the films became almost perfect, very large sized single crystals.
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