Abstract
In this paper a fully IC-compatible silicon wafer-to-wafer fusion-bonding process is described. Before the bonding, the silicon surfaces are treated by chemicals which do not attack the electronic circuits or aluminium patterns on the silicon. The prebonding of the two silicon wafers is performed at room temperature. after which bonding takes place through annealing at temperatures between 120 and 400°C without affecting the performance of the electronic circuitry. The bonding is sufficiently strong for microsensor applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
