Abstract
Discrepancies observed between the DC and RF characteristics of the Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.48/In/sub 0.52/As HEMT are presented. Owing to the deep-level electron trapping, the DC I/V curve is distorted and the DC transconductance (g/sub mDC/) is severely compressed. The small-signal RF performance is not degraded by this low-frequency phenomenon. RF transconductance (g/sub mRF/) of 555 mS/mm and the current gain cut-off frequency (f/sub t/) of 102 GHz were obtained.
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