Ab-initio Calculation of Electronic Properties of Doped GaN Nanoribbon

Abstract

In this study, the electronic and magnetic properties of hydrogen-passivated armchair and zigzag GaN nanoribbons are investigated using density-functional theory. We explore that doped TM atom leads to additional levels in the band gap and thus plays an essential role in spin polarization and changes their properties. Depending on its location in the nanoribbon, the character of spin-dependent electronic property of a doped GaN-NR was analyzed. Our calculations show that, regardless of the position of Mn atoms, GaNNTs are stable in ferromagnetic phase.