Abstract
This research studies the method to optimization of polishing slurry which colloidal silica based (SiO_2 slurry) containing C_<60>(OH)_n n=ca.10 for Chemical Mechanical Polishing (CMP) process by concentration dependence on the C_<60>(OH)_n solute between 0-0.05 wt% and varying size of abrasive particle in colloidal silica slurry between 20-55 nm. We focussed on relationship between the effect of abrasive particle size and polishing performance such as Material Removl Rate (MRR) and surface roughness of sapphire substartes. This paper consists of two parts, the first section in order of slurry preparation and polishing condition setting up for CMP process. The last section are the MRR value calculating and abrasive particle diameter size before and after CMP process measuring for optimization of mixed colloidal silica and fullerenol slurry in CMP of sapphire. These results indicate that diameter of the fine particle composed by colloidal silica slurry and C_<60>(OH)_n is a dominant parametrs to determid the MRR values against the apphire CMP.
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