Abstract
Hysteresis was observed with nonequilibrium characteristics in the sidegate voltage dependence of drain current when measuring the threshold behavior of sidegating effect in GaAs metal–semiconductor field-effect transistors in the voltage-controlled condition. Once the sidegate voltage is varied in a quasi-steady state, hysteresis disappears immediately. A new mechanism is presented to explain the phenomenon that hysteresis are related to electron capture and emission from EL2 deep center on the substrate side of channel-substrate junction.
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