Abstract

We show that transfer hysteresis for a pentacene thin film transistor (TFT) with a low-temperature solution-processed zirconia (ZrOx) gate insulator can be remarkably reduced by modifying the ZrOx surface with a thin layer of crosslinked poly(4-vinylphenol) (c-PVP). Pentacene TFTs with bare ZrOx and c-PVP stacked ZrOx gate insulators were fabricated, and their hysteresis behaviors compared. The different gate insulators exhibited no significant surface morphology or capacitance differences. The threshold voltage shift magnitude decreased by approximately 71% for the TFT with the c-PVP stacked ZrOx gate insulator compared with the bare ZrOx gate insulator, with 0.75 ± 0.05 and 0.22 ± 0.03 V threshold voltage shifts for the bare ZrOx and c-PVP stacked ZrOx gate insulators, respectively. The hysteresis reduction was attributed to effectively covering hysteresis-inducing charge trapping sites on ZrOx surfaces.

Highlights

  • Combined metal oxide and organic layers have been extensively studied for research and practical applications [1,2,3], providing key functional materials for next-generation electronics

  • ΓP s ≈ 36.0 and 39.1 mJ/m2 for bare and crosslinked poly(4-vinylphenol) (c-PVP) stacked ZrOx thin films, respectively, i.e., the c-PVP stacked ZrOx thin film exhibited a higher γP than the bare ZrOx thin film

  • Between the bare ZrOx and c-PVP stacked ZrOx thin films is related to their different chemical states

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Summary

Introduction

Combined metal oxide and organic layers have been extensively studied for research and practical applications [1,2,3], providing key functional materials for next-generation electronics. Applications for metal oxides and organic compounds encompass a wide range of electronic components including thin film transistors (TFTs), light emitting diodes, photovoltaic cells, and biochemical sensors [4,5,6]. One of their most critical features is solution processability, which offers facile low-cost large area production for electronics compared with conventional vacuum processes. Combined metal oxide and organic layers may provide new concepts for electronics incorporating flexibility, transparency, and other significant technological advantages

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