Hysteresis loop design by geometry of garnet film element with single domain wall

Abstract

Numerical modeling and experimental investigation of magnetostatic stable states of two-domain structure in Bi-substituted uniaxial garnet film elements was made. Single domain walls (DW) between two opposite normally magnetized parts in isolated rectangular strip and strip-like bridge are found to exhibit different behavior. DW inside strip (bridge) suffers increasing repulsion (attraction) from nearest edge when shifted from element center. DW position center position is stable in isolated strip but bridge is magnetized spontaneously to one of two saturated states in zero external field. Isolated strip magnetization process occurs reversibly while bridge magnetization reversal occurs by coercive manner. Strip susceptibility and bridge coercive field are entirely defined by magnetostatic barrier created by element boundary stray field in case of constant DW length during magnetization reversal. Variation of strip and bridge boundary shape along DW trajectory gives the opportunity to create additional controllable potential profile due to DW surface energy modulation by DW length. Garnet elements with high Faraday rotation and low light switching field were developed for fine magnetic sensing and optical data processing applications.