Abstract
The current density-voltage (J–V) hysteresis phenomenon occurs in perovskite solar cells as well as dye-sensitized solar cells (DSCs); however, it has received little attention in DSCs. We consider that the trapping–detrapping-induced variation of the charge collection efficiency might cause J–V hysteresis. Therefore, we conduct a systematic study on the influence of an external bias field during and before J–V measurements in typical DSCs. We find that the J–V performance of DSCs significantly depends on the scan bias direction and the external bias field before and during measurements. Our results indicate that the external-bias-field-modulated charge injection, trapping–detrapping, and accumulation processes in DSCs are possible causes for the anomalous J–V behavior.
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