Abstract
Ion-beam doping of GaAs with hyperthermal (30–500 eV) carbon ion (C +) has been investigated using a combined ion beam and molecular beam epitaxy (CIBMBE) system. The CIBME system is a combination technique between a low-energy ion accelerator and a solid-source MBE, which are connected under ultra-high vacuum (UHV) condition. C +-doping was carried out during GaAs MBE growth at substrate temperature of 550°C with the same C + beam current density. Grown layers were characterized by low-temperature (2 K) photoluminescence and room temperature Hall effect measurements, and it was revealed that the incorporation behavior of C significantly depends on the acceleration energy of C + ( E C). The highest net hole concentration (∥ N A − N D∥) was obtained at E C + = 170 eV. In the energy range of E C + < 170 eV, ∥ N A − N D∥ slightly increased as E C + increased, and for E C + > 170 eV ∥ N A − N D∥ dramatically decreased with increasing E C + , which can be explained in terms of enhanced sputtering effect. On the other hand, ion-beam induced radiation damages were observed for E C + > 170 eV.
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