Abstract
The hyperspherical coordinates method is used to study the problem of exciton-ionized donor complex in semiconductors. The critical mass ratio σ c = m e/m h) for the existence of such a complex is found to be 0.34. As a concrete example, we calculate the low-lying bound state energy levels of the complex in GaAs. Two bound states are found, one level lies between −1.0576 and −1.0471, the first excited state bounded loosely between −1.0235 and −1.0138 in unit of isolated donor binding energy.
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