Abstract
The binding energy of excitonium negative ion for the ground1,3S-states in bulk semiconductors GaAs and ZnO in the hyperspherical coordinate method was found. Angular and radial correlations between electrons in gerade and ungerade states were taken into account by channel functions, that are the eigenfunctions of Hamiltonian on the surface of the sphere in the three-dimensional configuration space. Energy values were calculated using the adiabatic and Born-Oppenheimer approximations. The obtained energy values are in agreement with those obtained using variational method.
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