Abstract
The principles of design and operation of a new avalanche photodiode structure are considered. The photodiode, comprises a silicon substrate, a semitransparent titanium gate separated from semiconductor by an insulating layer, and a drain electrode ensuring the surface transport of multiplicated charge carriers along the semiconductor—insulator interface. It is shown that multielement avalanche photodiode structures can be created, including charge-coupled-device matrices with the intrinsic photosignal gain above 104.
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