Hygroscopic fluorine‐doped silicon oxide thin‐film‐based large‐area three‐layered moisture barrier using a roll‐to‐roll microwave plasma‐enhanced chemical vapor deposition system

Abstract

AbstractIn this study, we fabricated an optically transparent and flexible SiNx/SiOF/SiNx (NFN) moisture barrier film using a highly hygroscopic fluorine‐doped silicon oxide (SiOF) thin film and a low moisture permeable silicon nitride (SiNx) thin film. The NFN three‐layered moisture barrier with SiOF (SiF4/N2O gas ratio, R = 1) was deposited in an in‐situ process to eliminate contamination in the atmosphere between the SiNx and SiOF thin films. The NFN moisture barrier achieved a water‐vapor transmission rate (WVTR) of approximately 3.94 × 10−4 g m−2 day−1 at R = 1. Additionally, the NFN three‐layered thin film showed a very high visible light transmittance of approximately 93.32% that is can be used in optical applications like display, solar cells, and so on.