Abstract
This study used the hydrothermal method to synthesize ZnSnO3 and ZnSnO3/rGO composite material with hierarchical and porous structure. ZnSnO3 was attached on the surface of rGO or between the lamellar layers to form a physically boned heterojunction semiconductor composite material. The ZnSnO3/rGO sensing material shows better gas-sensing properties than ZnSnO3 sensor to acetone. Compared with the operating temperature of ZnSnO3 sensor (425 °C), the optimal operating temperature of ZnSnO3/rGO sensor was only 350 °C, the sensitivity to 50 ppm acetone gas was 80.371, and the response/recovery time was only 4 /27 s. The improved gas-sensing performance of ZnSnO3/rGO sensing material can be ascribed to the large specific surface area, hierarchical, porous structure, and unique heterojunction of the composite material. The high sensitivity, fast response/recovery characteristics, excellent selectivity and stability of ZnSnO3/rGO make it an ideal sensing material for detecting acetone.
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