Abstract

A facile one-step hydrothermal method has been reported to prepare the single-crystalline anatase TiO2 nanowire arrays with (101) preferentially oriented on the FTO substrate. The as-prepared Au/TiO2 NWAs/FTO based device exhibits the nonvolatile bipolar memristive switching behaviors with a high HRS/LRS resistance ratio of about three orders of magnitude. The memristive switching behaviors of the device have been elucidated by the Ohmic conduction mechanism and the trap-controlled space charge limited current conduction mechanism. Furthermore, the Schottky barriers modulated by the oxygen vacancies at the Au/TiO2 interface have been suggested to dominate the bipolar memristive switching behaviors of the device. This work demonstrates that the Au/TiO2 NWAs/FTO based device may be a promising candidate for memristor applications.

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