Hydrothermal fabrication of p‐Cu2O−n‐ZnO films and their properties for photodegradation and ultraviolet sensors

Abstract

AbstractThis article reports spin coating and hydrothermal approaches to the synthesis of Cu2O seed layer−ZnO and Cu2O film−ZnO heterojunction films on fluorine‐doped tin oxide substrates. Cu2O seed layers and an ethylene glycol (EG) reducing agent were employed to obtain pure, uniform, and adhesive Cu2O films on the substrate. Transmission electron microscopy validated the heterojunctions with clear interfaces between each component on the p‐Cu2O film−n‐ZnO (with EG) sample, the conductive types of which were determined through Mott−Schottky measurements. Constructed energy band diagrams supported the Mott−Schottky result, manifesting favorable conduction band positions for the generation of •O2− radicals for all constituent materials and indicating smooth charge carrier transport for the p‐Cu2O film−n‐ZnO (with EG) sample. Furthermore, abundant p−n junction interfaces synergistically enabled the sample to exhibit the most satisfactory photodegradation capability (rate constant ≈ 8.9 × 10−3 min−1), which was attributable to the predominance of •OH radicals. The sample's rectifying (diode) behavior with a ratio of the current density (J) at +3 V (forward bias) to that at −3 V (reverse bias) of approximately 27 was observed without ultraviolet illumination. Moreover, the J at −3 V is under illumination approximately 80 times that without illumination, implying the suitability of the sample for UV detectability.