Abstract

Magnetoresistance and Hall coefficient measurements were made as a function of free carrier concentration, pressure, temperature and magnetic field in samples of n-InSb with initial n in the range 2.1 × 10 13−1.4 × 10 14 cm −3. The free carrier concentrations could be controlled down to n « 10 11 cm −3 both by using the metastable properties of the lattice coupled defects and by keeping the pressure at low temperatures. The results show clear evidence for the interplay between the correlation and the localization effects at the metal-insulator transition.

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