Abstract
AbstractUsing the variational method and the effective mass approximation, we have calculated the influence of applied electric and magnetic fields, both in the axial direction, and hydrostatic pressure on the binding energy and photoionization cross section for on center shallow‐donor impurities in cylindrical shaped GaAs–Ga1–x Alx As quantum dots. For the hydrostatic pressure effects the Γ–X crossover has been taken into account. Different values for the structure dimensions, applied electric and magnetic fields, hydrostatic pressure, and energy of the incident photon have been considered. Because the parallel polarization of the incident radiation has been considered, the main effects on the photoionization cross section are associated with the applied electric field. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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