Hydrostatic pressure effects on Mn in GaAs 1−xP x

Abstract

Hydrostatic pressure has been applied to samples of Mn-doped GaAs and GaAs 1−xP x ( x=0.04). The charge transfer nature of the radiative recombination allows determination of the pressure derivative of the Mn acceptor level relative to the valence band edge. The pressure derivatives have been determined and are found to be identical for both the binary and ternary material, 1.1–1.2meV/kbar. This number is only a small fraction of the total pressure derivative of the Γ 1c−Γ 15v energy gap which amounts to 10.7meV/kbar. Using the Mn acceptor energy level as a reference we were able to determine the hydrostatic deformation potentials of the valence and conduction bands and found values of a v =+0.9 eV and a c =−7.7 eV respectively, in excellent agreement with recent theoretical values.