Abstract
Hybrid bonding is an indispensable technique for the 3D integration of electronic systems. Cu-to-Cu interconnections and SiO2-to-SiO2 dielectric layers should be bonded simultaneously in the wafer-to-wafer bonding process. In this study, sequential plasma activation (SPA) including O2 plasma, N2 plasma, and N radical is investigated for low-temperature bonding of Cu and TEOS SiO2 at 200°C. The SPA bonding improves the bond strength to more than 1 J/m2 compared to the conventional single gas plasma activation bonding. The surface analysis indicates that SPA forms oxynitrides on TEOS SiO2 surface and Cu oxide with adsorbed water on the Cu surface, facilitating the bonding interface formation. The presented technique will contribute to the hybrid bonding applications at lower temperatures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
