Abstract
Low-dose proton- and helium-implanted silicon was studied by deep-level transient spectroscopy. By comparing the spectra as well as the defect level concentration profiles, five electron traps and one hole trap (after proton implantation at room temperature) and one dominant electron trap (after proton implantation at 80K) were identified to be hydrogen-related. Two of the hydrogen-related defect levels produced at room temperature represent different charge states of the same defect with a structure probably containing two hydrogen atoms. The electron trap produced by proton implantation at 80K is a donor level located at about Ec-0.2 eV. The defect is tentatively identified as a vacancy-hydrogen complex or a hydrogen atom in a single interstitial site and anneals out before reaching room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
