Abstract
In this paper, a triple gate (TG) cavity based, polysilicon junctionless (JL) ion-sensitive field-effect transistor (ISFET) architecture has been proposed for the first time. The performance of the proposed device has been compared with conventionally doped ISFET. The effect of pH is investigated for different adhesion layers, device layer thickness (tsi), electrolyte thickness (te) and, channel lengths (L). Threshold voltage( $\frac {\triangle {V_{th}}}{\triangle {pH}}$ ) has been used as sensing metric for analysis and comparison. Besides, ION/IOFF ratio has also been measured for different pH. The average maximum threshold voltage sensitivity of the proposed device has been measured and found to be 72.5%, 49.5%, and 53.7% better than TG-conventional ISFET for different adhesion layers, device layer thickness, and channel lengths respectively. Furthermore, the effect of channel lenghth on threshold voltage sensitivity has also been studied. It is observed that the sensitivity increases with increase in channel length. The implementation and all the simulations have been performed by using the ATLAS device simulator.
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