Abstract
We calculate hydrogenic impurity binding energies in quasi-one-dimensional GaAs AlAs quantum well wires with periodical lateral surface structures using a variational approach. By a coordinate transformation, the structured interfaces of the wires are transformed into planar ones so that the boundary conditions of the electronic wave functions can be satisfied exactly on the interfaces. The dependence of the binding energies on the positions of the impurities and on the lateral surface structures are studied.
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