Abstract

In this study, the effect of impurity factor on the optical absorption coefficients, refractive index changes, second harmonic generation, and third-harmonic generation for the intersubband transitions is explored between the electronic states of Ga1-xAlxAs quantum wire initiated by the symmetric parabolic potential. The system is conquered by the presence of an intense electric field, magnetic field, and Rashba spin-orbit interaction. For the linear and non-linear optical absorption coefficients, refractive index, second harmonic generation, and third harmonic generation coefficient, the analytical expressions are obtained with the assistance of the compact density-matrix approach. The arithmetical outcomes illustrate the optical properties are significantly intuitive to the concentration of impurity and can be controlled by this parameter. The variation in the magnitude and position of peaks via impurity factor indicates the opportunity in the mechanism of optical non-linearity in the quantum wire and also, helps in the optical non-linearity tuning which has device application.

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