Hydrogenic Donor Binding Energy in a Strained BxGa1-xN/BN Quantum well

Abstract

Group III nitride materials are well known for their superior thermal, mechanical and optical properties. They can be used for short-wavelength light-emitting diodes, laser diodes and optical detectors and high electron mobility transistors and they have a high melting point, high thermal conductivity, a stronger resistance to oxidation at high temperatures and transparency to a large spectrum. Group III-Nitride alloys can be easily integrated in integrated electronic systems including current amplifiers. In the present work, the binding energy of a hydrogenic donor is studied taking into account the geometrical confinement and the various Boron alloy content. GaN semiconducting material acts as the inner quantum well material whereas BN material acts as the outer barrier material. The energy eigen values and binding energy of a hydrogenic donor are obtained using variational technique within a single band effective mass approximation.