Abstract
The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 10B to 11B clearly showed the formation of the B–H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B–H complexes, as well as the well-known passivation center in B-doped Si, namely, H–B passivation center.
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