Hydrogenation of Si(113) surfaces by photoelectrochemical treatment.

Abstract

Si(113) surfaces have been prepared photoelectrochemically in an aqueous solution of ${\mathrm{NH}}_{4}$F. Using high-resolution electron-energy-loss spectroscopy and low-energy electron diffraction, it is shown that Si(113)1\ifmmode\times\else\texttimes\fi{}1-H, i.e., a bulk-truncated and H-terminated Si(113) surface, can be prepared. It is concluded that the truncation plane is such that all SiH bonds lie in the (11\ifmmode\bar\else\textasciimacron\fi{}0) plane. The HSiH (dihydride) groups are located in the surface and the SiH (monohydride) groups in the second layer.