Abstract

We report studies of hydrogenated multiple-quantum-well (MQW) optical-modulator structures via electron-cyclotron-resonance-derived plasmas. Responsivity, optical transmission, current-voltage, and capacitance-voltage characterizations of Schottky- as well as pin-diode modulator structures were performed. We find photocurrent-collection efficiency and photoluminescence intensity to be enhanced by hydrogenation, with measurable improvement in electrically biased exciton-absorption linewidth also seen. We interpret our results as arising from increased carrier lifetime in the MQW region, because of passivation of deep levels/defects. The improvements were stable after 550 °C heat treatment. These effects may be useful for improving the yield of usable MQW devices grown in a given system.

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