Abstract
The deposition of hydrogenated nanocrystalline silicon (nc-Si:H) on float glass substrate at a relative high working pressure (100 Pa–500 Pa) is performed by using a conventional Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD). Film characterizations were performed by X-ray diffraction (XRD), Raman spectrum and Field emission electron microscopy. The crystalline volume fraction was determined from Raman spectra. Correlation between the crystallinity and deposition parameters, such as working pressure, flow rate ratio of H 2 /Si H 4 , and RF power was studied. It was found that deposition at a relative high pressure (500 Pa) and with hydrogen dilution ratio 300–500 led to higher crystallinity of the films. The high deposition pressure also resulted in a higher deposition rate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
