Abstract
Hydrogenation of thin-film indium-gallium-zincoxide (IGZO) is carried out by applying a high-pressure hydrogen annealing (HPHA) process under 5-atm pressure at different temperatures of 260°C, 270°C, and 280°C. The HPHA effectively increases the carrier concentration and the Hall mobility up to ~ 1019 cm-3 and ~ 6.4 cm2/Vs, respectively. The HPHA-IGZO films exhibit smoother surfaces as compared with the as-grown films. The HPHA performs at a temperature of 260 °C that greatly enhances the electrical characteristics of IGZO TFTs, leading to a saturation field effect mobility of 7.4 cm2/Vs, a subthreshold slope of 0.37 V/decade, a threshold voltage of 2.2 V, and an ION/IOFF of 2.0×106.
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