Abstract
AbstractThis chapter continues the coverage of the physics of transistors based on amorphous silicon material. It presents to the readers an overview of the basic physics that underline an a-Si:H TFT operation with some trends describing the required concepts for a simple and accurate modeling of a standard planar transistor with a top gate configuration. It deals with a theoretical effort directed to a description of the effects of the amorphous silicon material nature on the transistor performance. An attempt is expended to get an insight analysis of the developed model and some thoughts associated to an understanding of the device operation are reviewed. According to the derived model, the transistor operation and performance are examined under some constraints inherent to the amorphous material. The chapter also includes some assessment criteria for the device performance associated to several parameters such as threshold voltage, field effect mobility and on-to-off current ratio. Once the operation and characteristics of the transistor are thoroughly understood, exploration of the extraction methods of these parameters is provided.KeywordsAnalytical modelinga-Sia-SiH TFTElectrical characteristics
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