Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface

Abstract

To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier-layer (BL) structure had been inserted at its p-i interface and used to enhance the hole injection efficiency of TFLED under forward-bias operation. Two TFLEDs with different BL structures were studied. The device I had a 25 Å i-type single-barrier structure and the device II had an i-type double-barrier structure of barrier(10 Å)/well(10 Å)/barrier(10 Å). The obtainable brightness of device I was 342 cd/m2 at an injection current density of 600 mA/cm2. On the other hand, the device II had a brightness of 256 cd/m2 at 800 mA/cm2. These brightnesses were about 3 orders of magnitude higher than that of a basic a-SiC:H p-i-n TFLED.