Abstract
We investigated the sorption of hydrogen by yttrium-based getters for their application to vacuum wafer-level packaging of microelectromechanical systems. Thin alloy films were co-evaporated under ultra-high vacuum on silicon wafers. Getters were activated by annealing during 1 h under inert argon atmosphere with traces of oxidizing species, at temperatures ranging from 200 °C to 400 °C. Three complementary techniques of ion beam analysis were performed on the samples: Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) and Elastic Recoil Detection Analysis (ERDA), to quantify metal, oxygen and hydrogen contents, and their in-depth distributions. The results show that oxidation occurs during annealing and prevents or not hydrogen sorption depending on the film composition. Due to its fast diffusion, hydrogen tends to accumulate near the film/substrate interface and starts to diffuse into the substrate as well. The different compositions of getter films are compared in terms of oxygen and hydrogen absorptions.
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