Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure

Abstract

This paper reports on new GaN sensors using a Pd-mixture-Pd triple-layer sensing structure to enhance their sensitivity to hydrogen at the tens of ppm level. The proposed hydrogen sensor biased with a constant voltage produced relatively high sensing responses of ∼4.84 × 10 5% at 10,100 ppm and ∼8.7 × 10 4% at 49.1 ppm H 2 in N 2. The corresponding barrier height variations are calculated to be 220 and 168 mV. When the sensor is biased by a constant current with maximum power consumption of 0.4 mW, a sensing voltage as an output signal showed a voltage shift of more than 17 V (the highest value ever reported) at 49.1 ppm H 2 in N 2. By comparison to Pd-deposited GaN sensors, the improvement in static-state performance is likely attributed to double dipole layers formed individually at the Pd–GaN interface and inside the mixture. Moreover, voltage transient response and current transient response to various hydrogen-containing gases were experimentally studied. The new finding is that the former response time is shorter than the latter one.