Abstract
There are great interest in hydrogen as an alternative energy source and a viable energy carrier. Compared to conventional fossil fuels, it is an emission-free fuel that can produce larger heat of enthalpy when reacted with oxygen. Hydrogen gas is extremely reactive with oxygen, and has very low ignition energy of 0.019 mJ. Especially, leaking gas from pressurized container may induce spontaneous flammable ignition due to its negative Joule-Thomson coefficient. Therefore, hydrogen gas sensing systems are essential in various hydrogen related applications. GaN based material system is well-suited to hydrogen sensing because of its wide bandgap for high temperature operation, and mechanical and chemical robustness for device reliability. Many types of devices based on the GaN, including Schottky diodes, metal oxide semiconductor diodes, GaN nanowires and AlGaN/GaN high electron mobility transistors have been developed for fast and sensitive detection of hydrogen. In this presentation, hydrogen sensing characteristics of highly sensitive GaN based hydrogen sensors with various crystal planes will be explained. Also, as a dramatic approach to improve the sensitivity of the device, active platinum nanostructure and photo-chemically etched GaN will be discussed. In addition, nano-porous membrane will be introduced for the reliable operation of hydrogen sensor in humid ambient.
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