Abstract
Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition of SiO 2 at the metal/semiconductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO 2 layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 × 10 5) is comparable to that of the MS one at 150 °C (2.04 × 10 5). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO 2 interface.
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