Abstract
AbstractThe dependence of catalytic metal thickness in Pt/AlGaN/GaN heterostructure Schottky diodes for high temperature hydrogen sensing is investigated. The decrease of Pt catalytic film thickness at the diodes enhances both the hydrogen sensitivity and the detection limit. As Pt film thickness decreases from 40 nm to 2.5 nm, the H2 detection limit improves from 100 ppb to 60 ppb at 25 °C and the sensitivity increases two to three times over the range of temperature from 25 °C to 500 °C and H concentration from 10 ppb to 5000 ppm. The effect of Pt thickness on the device current modulation by H2 is dependent only on the Schottky barrier height change (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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