Abstract
A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET), based on sensitization, activation, and electroless plating (EP) deposition approaches, is fabricated and studied. Utilizing the sensitization and activation processes, a dense and uniform Pd seed layer could be implanted on the AlGaN layer prior to Pt-gate formation. In addition, a dense Pt-gate morphology and excellent Schottky contact properties are obtained. This causes significant improvement in DC performance and thermal stabilities as compared with a thermal evaporation (TE)-based one. For a used gate dimension of 1×100μm2, the lower gate leakage current of 0.9 (8.4)nA, higher maximum extrinsic transconductance of 90.1 (52.1)mS/mm, and maximum drain saturation current of 325 (178)mA/mm are found for an EP Pt-gate HFET at 300 (600)K. Moreover, as a hydrogen gas sensor, the maximum drain current response (13.7%), high on/off ratio (8×105), and fast response (28s) and recovery (36s) time constants in 10,000, 50, and 5ppm H2/air gases are obtained at 400K, respectively. Therefore, the studied EP Pt-gate HFET shows promise for a high-performance electronic device and hydrogen gas sensing applications.
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