Abstract
Hydrogen (H) is thought to be strongly involved in the light and elevated temperature-induced degradation observed predominantly in p-type silicon wafers, but the nature of the defect or defects involved in this process is currently unknown. We have used infrared (IR) spectroscopy to detect the vibrational signatures due to the H–B, H–Ga, and H2*(C) defects in thin, hydrogenated, p-type multicrystalline silicon wafers after increasing the optical path length by preparation and polishing the edges of a stack of wafers. The concentrations of the H–B and H–Ga acceptor complexes are reduced to 80% of their starting values after low intensity (5 mW/cm2) illumination at room temperature for 96 h. Subsequent high intensity illumination (70 mW/cm2) at 150 °C for 7–8 h further decreases the concentrations of these defects; to ∼40% (H–B) and ∼50% (H–Ga) of their starting values. Our results show that, with careful sample preparation, IR spectroscopy can be used in conjunction with other techniques, e.g., quasisteady-state photoconductance, to investigate the involvement of different H-related point defects on degradation in solar-grade silicon wafers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.