Abstract
The applicability of secondary ion mass spectrometry (SIMS) was evaluated for measuring the variation of hydrogen distributions in chemical vapor deposition (CVD) SiO 2 films by post-oxidation annealing (POA). No noticeable hydrogen migration induced by electron or ion beam irradiation was observed. An increase of hydrogen ion intensity at the thermal SiO 2/Si interface was observed regardless of the presence of a CVD SiO 2 cap. Also, it was found that POA caused remarkable reduction of the hydrogen concentration at the SiO 2/Si interface. This result agreed well with those by grazing incidence X-ray reflectivity (GIXR) and C– V measurements. These results lead us to the conclusion that the excess hydrogen present at the interfacial region was released during re-oxidation.
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