Abstract
We have irradiated n-type CZ silicon with 2MeV electrons at room temperature, and atomic hydrogen has been introduced either before or after irradiation from the surface by wet etching. Quantitative comparisons of vacancy-related defects before and after the hydrogen reactions have been made using high-resolution (Laplace) DLTS. A deep level appears after hydrogenation at EC — 0.311eV, with two components detected by Laplace DLTS. This has previously been reported to be due to either VOH or VOH2, and is accompanied by a decrease in the intensity of the A centre (VO). The Laplace DLTS shows that the A centre emission rate is modified by the hydrogen, and a slower emission rate from the A centre is observed in the presence of hydrogen. Depth profiling shows that this modification occurs in the expected spatial location of the introduced hydrogen.
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