Hydrogen Radical Etching Effect on Carbon Nanotube Growth

Abstract

ABSTRACTThe hydrogen microwave remote plasma CVD was introduced to fabricate carbon nanotubes(CNTs). C2H2 or CH4, used as source gas react with hydrogen radicals introduced from the cavity. In this experiment, hydrogen radical etching effect on the substrate surface could be controlled independently. We confirmed CNTs growth at 400°C under adequate hydrogen radical etching effect on the substrate surface. The result directly suggests that the etching effect of hydrogen radicals on the reaction surface contribute to the low temperature growth of CNTs. The CNT thickness did not depend on the hydrogen radical etching effect but the catalyst layer thickness.