Abstract
Indium doped ZnO (ZnO:In) thin films were prepared on corning 7059 glass by the pyrosol method and the hydrogen plasma durability of the films was investigated. We found that the ZnO:In films prepared at the higher substrate temperature of 425° C to 475° C have better hydrogen plasma durability because its denser surface with smaller grain boundary region kept energetic hydrogen ions from diffusing into the grain boundaries. Two kinds of SnO2:F/ZnO:In bilayer films were fabricated at the temperature of 425° C through a successive process by the pyrosol method: the SnO2:F/ZnO:In with thin (580 Å) ZnO:In and the SnO2:F/ZnO:In with thick (2000 Å) ZnO:In. The former has excellent durability owing to its thin (580 Å) ZnO:In layer which acts as a barrier against hydrogen ions. It has a resistivity of 6.6×10-4 Ω cm and a transmittance of 83.8% at the wavelength of 550 nm. The latter is a bilayer film of the SnO2:F/ZnO:In with thick (2000 Å) ZnO:In which acts not only as a barrier but as a light scattering layer due to the highly textured thick (2000 Å) ZnO:In film.
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