Abstract
We investigated the effects of hydrogen plasma treatment on the electrical transport properties of ZnO nanowire field effect transistors (FETs) with a back gate configuration. After hydrogen plasma treatment of the FET devices, the effective carrier density and mobility of the nanowire FETs increased with a threshold voltage shift toward a negative gate bias direction. This can be attributed to the desorption of oxygen molecules adsorbed on the surface of the nanowire channel, to passivation and to doping effects due to the incorporation of energetic hydrogen ions generated in plasma.
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