Abstract
Hydrogen-plasma-induced defects in crystalline germanium have been studied by means of cross-sectional transmission electron microscopy (TEM) and infrared (IR) absorption spectroscopy. TEM shows tiny cavities that have clustered in plate-like structures. IR reveals two broad absorption bands, which have been assigned to the vibrational modes of germanium–hydrogen bonds inside the formed extended defects. Both techniques indicate that platelets have been formed close to the surface due to hydrogenation. Deep-level transient spectroscopy (DLTS) shows that this treatment not only changes the electrical characteristics close to the surface where the platelets are generated but also that deep levels are formed in a region extending a few microns below the surface. Two levels are characterized, one at 237 meV below the conduction band in n-type material, the other 170 meV from the valence band in p-type material. In addition to defects which can be described by a single-level emission, also additional different states nearby the surface can be found.
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