Abstract
The hydrogen plasma durability of textured SnO/sub 2/:F films was investigated at 220 degrees C. It was found that during the initial stage of exposure, TCO films with a carrier concentration less than 4*10/sup 20/ cm/sup -3/ show a decrease in resistivity. A Hall-effect measurement revealed that the decrease in resistivity was due mostly to a mobility increase. This increase could be explained by the reduction of potential barrier height due to the proton passivation of grain boundaries. The results suggest that SnO/sub 2/:F films with low carrier concentration pretreated by hydrogen plasma can possess the conflicting properties of low absorption and low resistivity. >
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